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  Datasheet File OCR Text:
 D
TO-247
G S
APT4016BN 400V
(R)
31.0A 0.16 29.0A 0.18
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT4018BN 400V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25C unless otherwise specified.
APT 4016BN APT 4018BN UNIT Volts Amps
400 31 124 30 360 2.9
400 29 116
Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts Watts W/C C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN APT4016BN APT4018BN APT4016BN APT4018BN APT4016BN APT4018BN
TYP
MAX
UNIT Volts
400 400 31
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
29 0.16
Ohms
RDS(ON)
0.18 250 1000 100 2 4
A nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
050-4008 Rev C
0.34 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT4016/4018BN
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 MIN TYP MAX UNIT
2850 690 280 130 20 60 15 42 90 65
3500 900 400 200 30 90 30 84 135 130
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT4016BN APT4018BN APT4016BN APT4018BN
TYP
MAX
UNIT
31 29 124 116 1.3 350 4.5 700 9
Volts ns C Amps
2
(VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s)
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT4016BN APT4018BN MIN TYP MAX UNIT Watts
360 360 124 116
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 SINGLE PULSE 0.001 10-5 10-4 0.02 0.01
Note:
PDM
t1 t2 2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t
050-4008 Rev C
Z
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT4016/4018BN
30 ID, DRAIN CURRENT (AMPERES) VGS=10V ID, DRAIN CURRENT (AMPERES) 6.5V 24 6V 18 30 VGS=10V 6.5V 24 6V
18
12
5.5V
12
5.5V
6
5V 4.5V
6
5V 4.5V
0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 TJ = -55C ID, DRAIN CURRENT (AMPERES) 24
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0
0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.50
TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.]
GS D
0
TJ = +25C TJ = +125C
2.00
18
1.50
VGS=10V
12
1.00
6
TJ = +125C TJ = +25C
TJ = -55C
VGS=20V
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 32 ID, DRAIN CURRENT (AMPERES)
0
0.50
0
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
APT4016BN 24 APT4018BN
1.1
1.0
16
0.9
8
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
0.7
-50
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 050-4008 Rev C
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT4016/4018BN
200
APT4016BN
10,000
APT4018BN
OPERATION HERE LIMITED BY RDS (ON)
100 ID, DRAIN CURRENT (AMPERES)
10S 5,000 100S C, CAPACITANCE (pF) Ciss Coss
APT4016BN APT4018BN
10
1mS 10mS 100mS
1,000 500
1 TC =+25C TJ =+150C SINGLE PULSE .1
DC
Crss
1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .05 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 TJ =+150C 20 10 5 TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=80V VDS=200V 12 VDS=320V
16
8
4
2 1
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
050-4008 Rev C
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)


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